Different Crystal Growth Mechanisms of Si(001)-(2 × 1):H during Plasma-Enhanced Chemical Vapor Deposition of SiH3 and SiH2 Radicals: Tight-Binding Quantum Chemical Molecular Dynamics Simulations

The Journal of Physical Chemistry C

DOI: 10.1021/jp4021504

Takuya Kuwahara, Hiroshi Ito, Kentaro Kawaguchi, Yuji Higuchi, Nobuki Ozawa and Momoji Kubo

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