Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth

The Journal of Physical Chemistry C

DOI: 10.1021/jp410145u

Don Dick, Jean-Francois Veyan, R. C. Longo, Stephen McDonnell, Josh B. Ballard, Xiaoye Qin, Hong Dong, James H. G. Owen, John N. Randall, Robert M. Wallace, Kyeongjae Cho and Yves J. Chabal

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