Thursday, July 24, 2014

Bias Induced Transition from an Ohmic to a Non-Ohmic Interface in Supramolecular Tunneling Junctions with Ga2O3/EGaIn Top Electrodes

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C4NR02933J, Paper

Kim Wimbush, Raluca M Fratila, dandan wang, dongchen qi, Liang Cao, Li Yuan, Nikolai L. Yakovlev, Kian Ping Loh, David Reinhoudt, Aldrik Velders, Christian Nijhuis

This study describes that the current rectification ratio, (R [identical with] |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a thin (0.7...

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