Tuesday, August 26, 2014

Electrical Breakdown of Multilayer MoS2 Field-Effect Transistors with Thickness-Dependent Mobility

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C4NR03472D, Communication

Rui Yang, Zenghui Wang, Philip Feng

We report on experimental investigation and modeling of electrical breakdown in multilayer (few- to tens-of-nanometer-thick) molybdenum disulfide (MoS2 ) field-effect transistors (FETs). By measuring MoS2 devices ranging from 5.7nm to 77nm...

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