Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR04315D, Communication
DOI: 10.1039/C4NR04315D, Communication
Jiaqi Li, Chang Chen, Hilde Jans, Xiumei Xu, Niels Verellen, Ingrid Vos, Yasuaki Okumura, Victor V. Moshchalkov, Liesbet Lagae, Pol Van Dorpe
The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level for reliable surface enhanced Raman spectroscopy applications.
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The 193 nm deep UV immersion lithography is leveraged to fabricate highly dense and uniform arrays of Au-capped Si nanopillars on a 300 mm wafer level for reliable surface enhanced Raman spectroscopy applications.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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