GaN nanowire coated with atomic layer deposition of tungsten: a probe for near-field scanning microwave microscopy

GaN nanowires were coated with tungsten by means of atomic layer deposition. These structures were then adapted as probe tips for near-field scanning microwave microscopy. These probes displayed a capacitive resolution of ∼0.03 fF, which surpasses that of a commercial Pt tip. Upon imaging of MoS 2 sheets with both the Pt and GaN nanowire tips, we found that the nanowire tips were comparatively immune to surface contamination and far more durable than their Pt counterparts.

Joel C Weber, Paul T Blanchard, Aric W Sanders, Jonas C Gertsch, Steven M George, Samuel Berweger, Atif Imtiaz, Kevin J Coakley, Thomas M Wallis, Kris A Bertness, Pavel Kabos, Norman A Sanford and Victor M Bright

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