Electrically pumped random lasing with an onset voltage of sub-3 V from ZnO-based light-emitting device featuring nanometers-thick MoO3 interlayer

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR01562F, Communication

Canxing Wang, Chunyan Lv, Chen Zhu, Zhifei Gao, Dongsheng Li, Xiangyang Ma, Deren Yang
We have previously reported on electrically pumped random lasing (RL) with onset voltages at least 3.3 V from ZnO-based light-emitting devices with metal-insulator-semiconductor (MIS) structures in the form of Au/SiO₂/ZnO....
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