Thursday, April 23, 2015

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

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Nano Letters
DOI: 10.1021/nl504437v

Eleonora Russo-Averchi, Jelena Vukajlovic Plestina, Gözde Tütüncüoglu, Federico Matteini, Anna Dalmau-Mallorquí, Maria de la Mata, Daniel Rüffer, Heidi A. Potts, Jordi Arbiol, Sonia Conesa-Boj and Anna Fontcuberta i Morral
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