Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR01251A, Paper
DOI: 10.1039/C5NR01251A, Paper
Andrii Kleshchonok, Rafael Gutierrez, Gianaurelio Cuniberti
Dangling bond structures created on H-passivated silicon surfaces offer a novel platform for engineering planar nanoscale circuits, compatible with conventional semiconductor technologies. We focus in this investigation on the electronic...
The content of this RSS Feed (c) The Royal Society of Chemistry
Dangling bond structures created on H-passivated silicon surfaces offer a novel platform for engineering planar nanoscale circuits, compatible with conventional semiconductor technologies. We focus in this investigation on the electronic...
The content of this RSS Feed (c) The Royal Society of Chemistry
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