Monday, July 06, 2015

Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy

Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR03503A, Paper
Zhi Zhang, Zhen-Yu Lu, Ping-Ping Chen, Wei Lu, Jin Zou
A two-V/III-ratio process to control the growth of pure defect-free zinc-blende structured InAs nanowires.
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