Nanoscale, 2015, 7,12839-12842
DOI: 10.1039/C5NR02778K, Communication
DOI: 10.1039/C5NR02778K, Communication
Hao-Di Wu, Feng-Xia Wang, Meng Zhang, Ge-Bo Pan
Field-effect transistors (FETs) based on coronene[middle dot]TCNQ exhibit an n-type characteristic and show better FET performances than TCNQ.
The content of this RSS Feed (c) The Royal Society of Chemistry
Field-effect transistors (FETs) based on coronene[middle dot]TCNQ exhibit an n-type characteristic and show better FET performances than TCNQ.
The content of this RSS Feed (c) The Royal Society of Chemistry
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