Nanochemistry: Reply to “Comment on ‘Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed’”

Thursday, February 04, 2016

Reply to “Comment on ‘Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed’”

ACS Nano

DOI: 10.1021/acsnano.5b08198

from ACS Nano: Latest Articles (ACS Publications) http://ift.tt/1L18UT6
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