Friday, July 01, 2016

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.6b01734


from ACS Nano: Latest Articles (ACS Publications) http://ift.tt/29mWeMM
via IFTTT
Posted by at

No comments:

Post a Comment

Subscribe to: Post Comments (Atom)