Thursday, May 31, 2018

[ASAP] Defect-Free Copolymer Gate Dielectrics for Gating MoS2 Transistors

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b03092


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/2L9MaHf
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