[ASAP] Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms
The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b04410
from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/2NEdj7u
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