Friday, October 19, 2018

[ASAP] Strain-Induced Topological Insulator in Methyl-Decorated SiGe Films

TOC Graphic

The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b08485


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/2ypX5Zp
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