Thursday, December 27, 2018

[ASAP] Tunable Direct Semiconductor Gap and High Carrier Mobility of Mo6Br6S3 Monolayer

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b09280


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) http://bit.ly/2SiyiOW
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