Wednesday, January 30, 2019

[ASAP] Structure and Strain Relaxation of GaN Nanorods Grown on Homoepitaxial Surface via Controlling Irregular Mask

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b10254


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) http://bit.ly/2GbcDF8
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