Thursday, February 21, 2019

[ASAP] Surface-Induced Carrier Localization and Recombination Characteristics in InGaN/GaN Quantum Dots in Nanopillars

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.8b11830


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/2U5fNP6
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