Monday, June 24, 2019

[ASAP] High Aspect Ratio ß-Ga2O3 Fin Arrays with Low-Interface Charge Density by Inverse Metal-Assisted Chemical Etching

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ACS Nano
DOI: 10.1021/acsnano.9b01709


from ACS Nano: Latest Articles (ACS Publications) http://bit.ly/2N9yja1
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