Thursday, July 18, 2019

[ASAP] Thermal Atomic Layer Etching of Al2O3, HfO2, and ZrO2 Using Sequential Hydrogen Fluoride and Dimethylaluminum Chloride Exposures

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.9b04767


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/30AoyDi
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