Monday, July 20, 2020

[ASAP] A ZrO2/TaO Bilayer Oxide Resistive Memory Exhibiting Near All-Around Performances

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.0c03455


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/2ZKFuJH
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