Monday, October 05, 2020

[ASAP] Modeling and Mechanism of Enhanced Performance of In-Ga-Zn-O Thin-Film Transistors with Nanometer Thicknesses under Temperature Stress

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.0c05911


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/3jzGKXA
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