Friday, July 02, 2021

[ASAP] First-Principles Calculations of Silicon Interstitial Defects at the Amorphous-SiO2/Si Interface

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c03701


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/3jO20Mz
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