Tuesday, July 20, 2021

[ASAP] Tuning Schottky Barrier and Contact Type of Metal–Semiconductor in Ti3C2T2/MoS2 (T = F, O, OH) by Strain: A First-Principles Study

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c03286


from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/36NlCbW
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