Nanochemistry: [ASAP] Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfSi1–O2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor

Friday, May 12, 2023

[ASAP] Role of Postdeposition Annealing and Doping with Si and Al Impurities in the Formation of HfSi1–O2 at the SiO2/FE:HfO2 Interface in a Ferroelectric Field-Effect Transistor

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The Journal of Physical Chemistry C

DOI: 10.1021/acs.jpcc.3c00420

from The Journal of Physical Chemistry C: Latest Articles (ACS Publications) https://ift.tt/HcMbid1
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