Andrew M Herrero, Paul T Blanchard, Aric Sanders, Matt D Brubaker, Norman A Sanford, Alexana Roshko and Kris A Bertness
The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Unlike Ni/Au contacts to planar GaN, current–voltage ( I – V ) measurements of Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N 2 /O 2 . This degradation originates from the poor wetting behavior of Ni and Au on SiO 2 and the excessive void formation that occurs at the metal/NW and metal/oxide interfaces. The void formation can cause cracking and delamination of the metal film as well as reduce the contact area at the metal/NW interface, which increases the resistance. The morphology and composition of the annealed Ni/Au contacts on SiO 2 and the p-GaN films were investigated by scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD) measurements. Adhesion experiments were performed in order to determine the degree of adhesion of the Ni/Au films to the SiO 2 ...
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The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Unlike Ni/Au contacts to planar GaN, current–voltage ( I – V ) measurements of Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N 2 /O 2 . This degradation originates from the poor wetting behavior of Ni and Au on SiO 2 and the excessive void formation that occurs at the metal/NW and metal/oxide interfaces. The void formation can cause cracking and delamination of the metal film as well as reduce the contact area at the metal/NW interface, which increases the resistance. The morphology and composition of the annealed Ni/Au contacts on SiO 2 and the p-GaN films were investigated by scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD) measurements. Adhesion experiments were performed in order to determine the degree of adhesion of the Ni/Au films to the SiO 2 ...
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