Friday, October 26, 2012

"Insitu" hard mask material: A new methodology for creation of vertical silicon nanopillar and nanowire arrays

M A Morris



Nanoscale , 2012, Accepted Manuscript

DOI: 10.1039/C2NR32693K, Paper

Tandra Ghoshal, Ramsankar Senthamaraikannan, Matthew Shaw, Justin Holmes, M A Morris

Here, we demonstrate a novel, simple and insitu hard mask technology that can be used to develop high aspect ratio silicon features on a substrate surface. The method combines a...

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