M A Morris
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Nanoscale , 2012, Accepted Manuscript
DOI: 10.1039/C2NR32693K, Paper
DOI: 10.1039/C2NR32693K, Paper
Tandra Ghoshal, Ramsankar Senthamaraikannan, Matthew Shaw, Justin Holmes, M A Morris
Here, we demonstrate a novel, simple and insitu hard mask technology that can be used to develop high aspect ratio silicon features on a substrate surface. The method combines a...
The content of this RSS Feed (c) The Royal Society of Chemistry
Here, we demonstrate a novel, simple and insitu hard mask technology that can be used to develop high aspect ratio silicon features on a substrate surface. The method combines a...
The content of this RSS Feed (c) The Royal Society of Chemistry
Link to full article
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