Jacek Gąsiorowski, Eric D. Głowacki, Barbara Hajduk, Mariola Siwy, Małgorzata Chwastek-Ogierman, Jan Weszka, Helmut Neugebauer and Niyazi S. Sariciftci
Liwei Li, Michael R. Morrill, Heng Shou, David G. Barton, Daniela Ferrari, Robert J. Davis, Pradeep K. Agrawal, Christopher W. Jones and David S. Sholl
Xing-Tao An, Yan-Yang Zhang, and Jian-Jun Liu et al.
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk ...[Appl. Phys. Lett. 102, 043113 (2013)]published Thu Jan 31, 2013.
Negative resistance devices offer opportunities in design of compact and fast analog and digital circuits. However, their implementation in logic applications has been limited due to their small ON current to OFF current ratios (peak to valley ratio). In this paper, a design for a 2-port negative ...[Appl. Phys. Lett. 102, 043114 (2013)]published Thu Jan 31, 2013.
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable ...[Appl. Phys. Lett. 102, 043116 (2013)]published Thu Jan 31, 2013.
Gregory W. Holloway, Yipu Song, and Chris M. Haapamaki et al.
Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial In0.8Al0.2As shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobilit ...[Appl. Phys. Lett. 102, 043115 (2013)]published Thu Jan 31, 2013.