Thursday, January 31, 2013

Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

(author unknown)



Wan Sik Hwang, Maja Remskar, and Rusen Yan et al.

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable ... [Appl. Phys. Lett. 102, 043116 (2013)] published Thu Jan 31, 2013.



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