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A. K. Singh, M. A. Uddin, and J. T. Tolson et al.
Electrical tunability of molecular doping of graphene has been investigated using back-gated field effect transistors. Variation of the gate voltage from positive to negative values resulted in reduced p-type doping by NO2, which decreased below detection limit at −45 V. A reverse trend was observ ... [Appl. Phys. Lett. 102, 043101 (2013)] published Mon Jan 28, 2013.
Link to full article
A. K. Singh, M. A. Uddin, and J. T. Tolson et al.
Electrical tunability of molecular doping of graphene has been investigated using back-gated field effect transistors. Variation of the gate voltage from positive to negative values resulted in reduced p-type doping by NO2, which decreased below detection limit at −45 V. A reverse trend was observ ... [Appl. Phys. Lett. 102, 043101 (2013)] published Mon Jan 28, 2013.
Link to full article
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