Influence of contact height on the performance of vertically aligned carbon nanotube field-effect transistors

Xixiang Zhang

, 2013, Accepted Manuscript

DOI: 10.1039/C3NR33263B, Paper

Jingqi Li, Yingchun Cheng, Zaibing Guo, Zhihong Wang, Zhiyong Zhu, Qing Zhang, Mary Chan-Park, Udo Schwingenschlogl, Xixiang Zhang

Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been experimentally demonstrated. The source and drain contact heights in vertical CNTFETs could be much higher than in flat CNTFETs if the...

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