Buffer layer induced band gap and surface low energy optical phonon scattering in epitaxial graphene on SiC(0001)

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C. Yu, J. Li, and Q. B. Liu et al.

The temperature dependent electrical properties of epitaxial graphene grown on Si-face and C-face SiC substrates were investigated by Hall measurements, respectively. Quasi-free-standing epitaxial graphene by H2 intercalation was adopted as the control. Due to a ∼200 meV band gap, the electrical c ... [Appl. Phys. Lett. 102, 013107 (2013)] published Mon Jan 07, 2013.



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