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Alberto Casadei, Peter Krogstrup, and Martin Heiss et al.
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorpor ... [Appl. Phys. Lett. 102, 013117 (2013)] published Thu Jan 10, 2013.
Link to full article
Alberto Casadei, Peter Krogstrup, and Martin Heiss et al.
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy have been investigated by electrical measurements of nanowires with different doping profiles. We find that Be atoms incorporate preferentially via the nanowire side facets, while the incorpor ... [Appl. Phys. Lett. 102, 013117 (2013)] published Thu Jan 10, 2013.
Link to full article
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