(author unknown)
Rim Khelifi, Daniel Mathiot, and Raghav Gupta et al.
It is shown that co-implantation, with overlapping projected ranges of Si and P or As, followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals (Si-nc's) embedded in SiO2 with diameters of a few nanometers. Atom probe tomography is used to image directly the sp ... [Appl. Phys. Lett. 102, 013116 (2013)] published Thu Jan 10, 2013.
Link to full article
Rim Khelifi, Daniel Mathiot, and Raghav Gupta et al.
It is shown that co-implantation, with overlapping projected ranges of Si and P or As, followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals (Si-nc's) embedded in SiO2 with diameters of a few nanometers. Atom probe tomography is used to image directly the sp ... [Appl. Phys. Lett. 102, 013116 (2013)] published Thu Jan 10, 2013.
Link to full article
No comments:
Post a Comment