Tuesday, January 15, 2013

Gate voltage induced topological phase transition in hexagonal boron-nitride bilayers

(author unknown)



Xuechao Zhai and Guojun Jin

Single or few-layer hexagonal boron nitride sheets usually have very large band gaps, which greatly hinders their applications in electronic circuits. In this letter, we propose a way to significantly reduce the band gap of hexagonal boron-nitride bilayer (BNBL) by applying an interlayer bias volt ... [Appl. Phys. Lett. 102, 023104 (2013)] published Tue Jan 15, 2013.



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