A new touch sensor device has been demonstrated with molybdenum disulfide (MoS 2 ) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS 2 (MPM) and metal/PVDF–TrFE/Al 2 O 3 /MoS 2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al 2 O 3 . The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al 2 O 3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles.
Woojin Park, Jin Ho Yang, Chang Goo Kang, Young Gon Lee, Hyeon Jun Hwang, Chunhum Cho, Sung Kwan Lim, Soo Cheol Kang, Woong-Ki Hong, Sang Kyung Lee, Sangchul Lee and Byoung Hun Lee
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Woojin Park, Jin Ho Yang, Chang Goo Kang, Young Gon Lee, Hyeon Jun Hwang, Chunhum Cho, Sung Kwan Lim, Soo Cheol Kang, Woong-Ki Hong, Sang Kyung Lee, Sangchul Lee and Byoung Hun Lee
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