Nanoscale , 2013, Advance Article
DOI: 10.1039/C3NR04114J, Paper
DOI: 10.1039/C3NR04114J, Paper
Yingjie Ma, Shufan Huang, Cheng Zeng, Tianyuan Zhou, Zhenyang Zhong, Tong Zhou, Yongliang Fan, Xinju Yang, Jinsong Xia, Zuimin Jiang
Controllable growth of lateral SiGe double QDs on nanohole-patterned Si (001) substrates with various interdot spacings and dot sizes was realized via molecular beam epitaxy.
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Controllable growth of lateral SiGe double QDs on nanohole-patterned Si (001) substrates with various interdot spacings and dot sizes was realized via molecular beam epitaxy.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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