A general method useful in molecular electronics design is developed that integrates modelling on the nano-scale (using quantum-chemical software) and on the micro-scale (using finite-element methods). It is applied to the design of an n -bit shift register memory that could conceivably be built using accessible technologies. To achieve this, the entire complex structure of the device would be built to atomic precision using feedback-controlled lithography to provide atomic-level control of silicon devices, controlled wet-chemical synthesis of molecular insulating pillars above the silicon, and controlled wet-chemical self-assembly of modular molecular devices to these pillars that connect to external metal electrodes (leads). The shift register consists of n connected cells that read data from an input electrode, pass it sequentially between the cells under the control of two external clock electrodes, and deliver it finally to an output device. The proposed cells a...
Nicholas A Lambropoulos, Jeffrey R Reimers, Maxwell J Crossley, Noel S Hush and Kia Silverbrook
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Nicholas A Lambropoulos, Jeffrey R Reimers, Maxwell J Crossley, Noel S Hush and Kia Silverbrook
Click for full article
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