Nanoscale , 2014, Advance Article
DOI: 10.1039/C3NR04953A, Communication
DOI: 10.1039/C3NR04953A, Communication
Kohei Matsubara, Siya Huang, Mitsumasa Iwamoto, Wei Pan
Improved electrical conductivity and p-type field effect transistors with an enhanced gating effect are realized with Li-doped NiO nanowires via a facile electrospinning technique.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Improved electrical conductivity and p-type field effect transistors with an enhanced gating effect are realized with Li-doped NiO nanowires via a facile electrospinning technique.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Click for full article
No comments:
Post a Comment