Nanoscale , 2014, Advance Article
DOI: 10.1039/C3NR04218A, Paper
DOI: 10.1039/C3NR04218A, Paper
Junhong Na, Min-Kyu Joo, Minju Shin, Junghwan Huh, Jae-Sung Kim, Mingxing Piao, Jun-Eon Jin, Ho-Kyun Jang, Hyung Jong Choi, Joon Hyung Shim, Gyu-Tae Kim
Low-frequency noise in multilayer MoS2 FETs was characterized with and without an Al2 O3 high-k dielectric passivation layer.
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Low-frequency noise in multilayer MoS2 FETs was characterized with and without an Al2 O3 high-k dielectric passivation layer.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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