Friday, March 14, 2014

A back-to-back MOS-Schottky (Pt-SiO2-Si-C-Pt) nano-heterojunction device as an efficient self-powered photodetector: one step fabrication by pulsed laser deposition




Nanoscale , 2014, 6,3550-3556

DOI: 10.1039/C3NR06525A, Communication

Parvez A. Shaikh, Vishal P. Thakare, Dattatray J. Late, Satishchandra Ogale

An efficient self-powered photodetector design involving a C-Si hetero-interface with back-to-back MOS-Schottky (Pt-SiO2 -Si-C-Pt) device action is presented. The combined device action yields two orders of magnitude photoresponse at zero bias.

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