Nanoscale , 2014, Accepted Manuscript
DOI: 10.1039/C3NR06690H, Paper
DOI: 10.1039/C3NR06690H, Paper
Huynh Van Ngoc, Jae-Hyun Lee, Jung Inn Sohn, SeungNam Cha, Dongmok Whang, Jong Min Kim, Dae Joon Kang
We successfully fabricated nanowire-based, complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n-and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices...
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We successfully fabricated nanowire-based, complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n-and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices...
The content of this RSS Feed (c) The Royal Society of Chemistry
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