Tuesday, March 04, 2014

Inverted Process for Graphene Integrated Circuits Fabrication

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C3NR06904D, Paper

Hongming Lv, Huaqiang Wu, Jinbiao Liu, Can Huang, Junfeng Li, Jiahan Yu, Jiebin Niu, Qiuxia Xu, Zhiping Yu, He Qian

CMOS compatible 200mm two-layer-routing technology is employed to fabricate graphene field-effect transistors (GFETs) and monolithic graphene ICs. The process is inverse to traditional Si technology. Passive elements are fabricated in...

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