The atomic structure of the cubic-SiC(001) surface during ultra-high vacuum graphene synthesis has been studied using scanning tunneling microscopy (STM) and low-energy electron diffraction. Atomically resolved STM studies prove the synthesis of a uniform, millimeter-scale graphene overlayer consisting of nanodomains rotated by ±13.5° relative to the 〈110〉-directed boundaries. The preferential directions of the domain boundaries coincide with the directions of carbon atomic chains on the SiC(001)-c(2 × 2) reconstruction, fabricated prior to graphene synthesis. The presented data show the correlation between the atomic structures of the SiC(001)-c(2 × 2) surface and the graphene/SiC(001) rotated domain network and pave the way for optimizing large-area graphene synthesis on low-cost cubic-SiC(001)/Si(001) wafers.
Alexander N Chaika, Olga V Molodtsova, Alexei A Zakharov, Dmitry Marchenko, Jaime Sánchez-Barriga, Andrei Varykhalov, Sergey V Babenkov, Marc Portail, Marcin Zielinski, Barry E Murphy, Sergey A Krasnikov, Olaf Lübben, Igor V Shvets and Victor Y Aristov
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Alexander N Chaika, Olga V Molodtsova, Alexei A Zakharov, Dmitry Marchenko, Jaime Sánchez-Barriga, Andrei Varykhalov, Sergey V Babenkov, Marc Portail, Marcin Zielinski, Barry E Murphy, Sergey A Krasnikov, Olaf Lübben, Igor V Shvets and Victor Y Aristov
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