Nanoscale , 2014, 6,3611-3617
DOI: 10.1039/C3NR05328H, Paper
DOI: 10.1039/C3NR05328H, Paper
Kyeong-Ju Moon, Tae Il Lee, Woong Lee, Jae-Min Myoung
A novel heterojunction white light emitting diode (LED) structure based on an array of vertically aligned surface-passivated p-type porous Si nanowires (PSiNWs) with n-type amorphous In-Ga-Zn-O (a-IGZO) capping is introduced.
The content of this RSS Feed (c) The Royal Society of Chemistry
A novel heterojunction white light emitting diode (LED) structure based on an array of vertically aligned surface-passivated p-type porous Si nanowires (PSiNWs) with n-type amorphous In-Ga-Zn-O (a-IGZO) capping is introduced.
The content of this RSS Feed (c) The Royal Society of Chemistry
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