Single Si nanowire (diameter [less-than-or-equal] 100nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

Nanoscale , 2014, Accepted Manuscript

DOI: 10.1039/C4NR03170A, Paper

K. Das, Subhrajit Mukherjee, Santanu Manna, Samit K Ray, Arup Raychaudhuri

We report on the fabrication and optical response of boron doped single silicon nanowire based metal-semiconductor-metal photodetectors. Typical single nanowire devices were made from nanowires, grown by metal-assisted chemical etching...

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