Nanoscale , 2014, Accepted Manuscript
DOI: 10.1039/C4NR04286G, Paper
DOI: 10.1039/C4NR04286G, Paper
Na Gao, Wei Lin, Xue Chen, Kai Huang, Shuping Li, Jinchai Li, Hangyang Chen, Xu Yang, Li Ji, E Yu, Junyong Kang
Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetectors. High-resolution transmission electron microscopy...
The content of this RSS Feed (c) The Royal Society of Chemistry
Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetectors. High-resolution transmission electron microscopy...
The content of this RSS Feed (c) The Royal Society of Chemistry
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