Nanoscale, 2015, Advance Article
DOI: 10.1039/C5NR04779J, Paper
DOI: 10.1039/C5NR04779J, Paper
Qian He, Alex Belianinov, Andrius Dziaugys, Petro Maksymovych, Yulian Vysochanskii, Sergei V. Kalinin, Albina Y. Borisevich
CuCr1-xInxP2S6 compounds are promising candidates for 2D materials with additional functionalities such as ferroelectricity. Quantitative STEM-HAADF studies found that in addition to isovalently replacing Cr3+, In3+ dopants can also occupy Cu+ sites, forming antisite defects.
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CuCr1-xInxP2S6 compounds are promising candidates for 2D materials with additional functionalities such as ferroelectricity. Quantitative STEM-HAADF studies found that in addition to isovalently replacing Cr3+, In3+ dopants can also occupy Cu+ sites, forming antisite defects.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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