Thursday, October 22, 2015

Self-screened high performance multi-layer MoS2 transistor formed by using bottom graphene electrode

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR06076A, Paper
Deshun Qu, Xiaochi Liu, Faisal Ahmed, Daeyeong Lee, Won Jong Yoo
We investigated the carrier transport in multi-layer MoS2 in consideration of contact resistance (Rc) and interlayer resistance (Rint). Bottom graphene contact was suggested to overcome the degradation of Id modulation...
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